GT50JR22(STA1,E,S)

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See Product Specifications

Mfr. #:

GT50JR22(STA1,E,S)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

PB-F IGBT / TRANSISTOR TO-3PN(OS

Упаковка:

Tube

Datasheet:

GT50JR22(STA1,E,S) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	GT50JR22(STA1,E,S)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	336d5ebc5436534e61d16e63ddfca327
Current - Collector (Ic) (Max):	336d5ebc5436534e61d16e63ddfca327
Current - Collector Pulsed (Icm):	336d5ebc5436534e61d16e63ddfca327
Vce(on) (Max) @ Vge, Ic:	336d5ebc5436534e61d16e63ddfca327
Power - Max:	336d5ebc5436534e61d16e63ddfca327
Switching Energy:	336d5ebc5436534e61d16e63ddfca327
Input Type:	336d5ebc5436534e61d16e63ddfca327
Gate Charge:	336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:	336d5ebc5436534e61d16e63ddfca327
Test Condition:	336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	336d5ebc5436534e61d16e63ddfca327
Package / Case:	336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:	336d5ebc5436534e61d16e63ddfca327