GT60N321(Q)

Images are for reference only
See Product Specifications

Mfr. #:

GT60N321(Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

IGBT 1000V 60A 170W TO3P LH

Упаковка:

Tube

Datasheet:

GT60N321(Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	GT60N321(Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Collector (Ic) (Max):	4c7be7db0ed1160a2dfac6e29929b43d
Current - Collector Pulsed (Icm):	4db308cc7032b73099a49fc453f78340
Vce(on) (Max) @ Vge, Ic:	156be1541cdd53b76323c562314fb4e9
Power - Max:	acad63a78b1890ca38df696b64901f58
Switching Energy:	336d5ebc5436534e61d16e63ddfca327
Input Type:	eb6d8ae6f20283755b339c0dc273988b
Gate Charge:	336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:	e0f21bda628bc275e4bbdcf22dea0d7d
Test Condition:	336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):	36389ab05292135bbfb97c9e999a5bd0
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	3d6f2d462c99f772438dca830bcf3379
Supplier Device Package:	a3aa892f433f4bb7c3a28dc838bf6856