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See Product Specifications
| номер части: | GT8G133(TE12L,Q) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - IGBTs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| IGBT Type: | 336d5ebc5436534e61d16e63ddfca327 |
| Voltage - Collector Emitter Breakdown (Max): | a51e6c3b115ead349deb13cbf5a43f23 |
| Current - Collector (Ic) (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| Current - Collector Pulsed (Icm): | 9d8ef823b80c7826a79ec135ee3f22cb |
| Vce(on) (Max) @ Vge, Ic: | 54793c52c4736acfc5286d53a5428aa7 |
| Power - Max: | 8d87549449c002cba6a2d8139a011d24 |
| Switching Energy: | 336d5ebc5436534e61d16e63ddfca327 |
| Input Type: | eb6d8ae6f20283755b339c0dc273988b |
| Gate Charge: | 336d5ebc5436534e61d16e63ddfca327 |
| Td (on/off) @ 25°C: | 6ec3486d0cfea3028666585e524dc425 |
| Test Condition: | 336d5ebc5436534e61d16e63ddfca327 |
| Reverse Recovery Time (trr): | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | e03a7a6d310a992f91d9ce6fc79d28ea |
| Supplier Device Package: | c7e6aa666302fa20c9ece91146965468 |
