GT8G133(TE12L,Q)

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See Product Specifications

Mfr. #:

GT8G133(TE12L,Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

IGBT 400V 600MW 8TSSOP

Упаковка:

Tape & Reel (TR)

Datasheet:

GT8G133(TE12L,Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	GT8G133(TE12L,Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	a51e6c3b115ead349deb13cbf5a43f23
Current - Collector (Ic) (Max):	336d5ebc5436534e61d16e63ddfca327
Current - Collector Pulsed (Icm):	9d8ef823b80c7826a79ec135ee3f22cb
Vce(on) (Max) @ Vge, Ic:	54793c52c4736acfc5286d53a5428aa7
Power - Max:	8d87549449c002cba6a2d8139a011d24
Switching Energy:	336d5ebc5436534e61d16e63ddfca327
Input Type:	eb6d8ae6f20283755b339c0dc273988b
Gate Charge:	336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:	6ec3486d0cfea3028666585e524dc425
Test Condition:	336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	e03a7a6d310a992f91d9ce6fc79d28ea
Supplier Device Package:	c7e6aa666302fa20c9ece91146965468