HN3C10FUTE85LF

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See Product Specifications

Mfr. #:

HN3C10FUTE85LF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

RF TRANS 2 NPN 12V 7GHZ US6

Упаковка:

Tape & Reel (TR)

Datasheet:

HN3C10FUTE85LF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	HN3C10FUTE85LF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - RF
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	500c49fa0917f9bd9ef8fd877732749d
Voltage - Collector Emitter Breakdown (Max):	ffb6e22cfcfa6ff4ab883374e06309ac
Frequency - Transition:	48f743ef4061bd515d9f0b04593ea344
Noise Figure (dB Typ @ f):	5f0c0d30e3b2bd78a86cac711e2258cd
Gain:	7f7833c90e7bcef057103f9d144f8122
Power - Max:	5b3273ce5fe742a768cbb4b75c900b70
DC Current Gain (hFE) (Min) @ Ic, Vce:	9adebd5c662753b7d4233389e5be3009
Current - Collector (Ic) (Max):	f0574f50621397803f61d5425704a2c3
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	4292fad3e2346c8afd373cfd6137b6e7
Supplier Device Package:	2a0a91bb70a3fc2ceb02f30fb3d7c2d6

In Stock: 101

Stock:

101 Can Ship Immediately