HN3C51F-GR(TE85L,F

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Mfr. #:

HN3C51F-GR(TE85L,F

Mfr.:

Toshiba Semiconductor and Storage

Описание:

TRANS 2NPN 120V 0.1A SM6

Упаковка:

Tape & Reel (TR)

Datasheet:

HN3C51F-GR(TE85L,F Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	HN3C51F-GR(TE85L,F
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Arrays
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Transistor Type:	500c49fa0917f9bd9ef8fd877732749d
Current - Collector (Ic) (Max):	8fa6a3a617ed852de22fab67a97483fa
Voltage - Collector Emitter Breakdown (Max):	0bbb13ba1e0b0c829ae034876148d387
Vce Saturation (Max) @ Ib, Ic:	f40c4f223c4f52a45399952c757f99e1
Current - Collector Cutoff (Max):	deeb8c7cafdc46f12ef41020ec559854
DC Current Gain (hFE) (Min) @ Ic, Vce:	5e0023d662987c41faa668dfb4973fbe
Power - Max:	2940c137f79e4ef421e163569997f029
Frequency - Transition:	4e737283b3b5e11a92b4e86c5967a37e
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	ba9086440b12ae203cf29e9ec113b2c0
Supplier Device Package:	0bca2f9caa85f1c1ba0f2348dca666b0