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See Product Specifications
| номер части: | HN3C51F-GR(TE85L,F |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | 500c49fa0917f9bd9ef8fd877732749d |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | 0bbb13ba1e0b0c829ae034876148d387 |
| Vce Saturation (Max) @ Ib, Ic: | f40c4f223c4f52a45399952c757f99e1 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 5e0023d662987c41faa668dfb4973fbe |
| Power - Max: | 2940c137f79e4ef421e163569997f029 |
| Frequency - Transition: | 4e737283b3b5e11a92b4e86c5967a37e |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | ba9086440b12ae203cf29e9ec113b2c0 |
| Supplier Device Package: | 0bca2f9caa85f1c1ba0f2348dca666b0 |
