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See Product Specifications
| номер части: | HN4B01JE(TE85L,F) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e7ba32259dc1c67d2eba04e6d042d7ec |
| Current - Collector (Ic) (Max): | fc92dd3b69ad1d37d6fd6bb30e37477e |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Vce Saturation (Max) @ Ib, Ic: | cb809df1a986e6a2517d344424539ae2 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | b1d56670712c7f861983218c757beb96 |
| Power - Max: | c4a759f95e24e7e8bc893d7baf9d09b4 |
| Frequency - Transition: | 20e3a666c0f38875bdf9ce0635b95246 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 64508b0d72ae5a3dfa37c38d39b7fe4e |
| Supplier Device Package: | bc78a8d162c6d5dcab05494d5e34a71e |
