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See Product Specifications
| номер части: | HN4C51J(TE85L,F) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | b3dcdba7ee766010550215f632b59449 |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | 0bbb13ba1e0b0c829ae034876148d387 |
| Vce Saturation (Max) @ Ib, Ic: | f40c4f223c4f52a45399952c757f99e1 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 5e0023d662987c41faa668dfb4973fbe |
| Power - Max: | 2940c137f79e4ef421e163569997f029 |
| Frequency - Transition: | 4e737283b3b5e11a92b4e86c5967a37e |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 25ae2b3764e46657eb65e9234be54ea6 |
| Supplier Device Package: | d6e2a1ed38669c6c0cdbe557b557cab7 |
