MT3S111P(TE12L,F)

Images are for reference only
See Product Specifications

Mfr. #:

MT3S111P(TE12L,F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

RF TRANS NPN 6V 8GHZ PW-MINI

Упаковка:

Tape & Reel (TR)

Datasheet:

MT3S111P(TE12L,F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	MT3S111P(TE12L,F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - RF
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	e3d31b6d6c1368232482785f7e6d9bd1
Voltage - Collector Emitter Breakdown (Max):	d58bb95aef80a9b06259c05a8650ba50
Frequency - Transition:	83309ea0d034db1d6a4be2510adc161e
Noise Figure (dB Typ @ f):	9b623b4f140f84b6b01144e3d0f83e93
Gain:	62e58a2cbf388ce82c73f234817701a2
Power - Max:	6a0a215cc8b7cad4343d58bff081a04a
DC Current Gain (hFE) (Min) @ Ic, Vce:	7b3705ab9394e097c241356096848bf8
Current - Collector (Ic) (Max):	8fa6a3a617ed852de22fab67a97483fa
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	80047cf912aa748ae51ce6180b581cf9
Supplier Device Package:	9be79cc75480f14b1c50110791202233