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See Product Specifications
| номер части: | MT3S113P(TE12L,F) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | 97f5420d6697ee4683f2261c15fd07f8 |
| Frequency - Transition: | 86285425b9e6676f4a087e8edf53dc49 |
| Noise Figure (dB Typ @ f): | e7ce6cc723449a24e5db69b018ece698 |
| Gain: | 62e58a2cbf388ce82c73f234817701a2 |
| Power - Max: | 54e56ed1245062ecefc07bfd8c99864e |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 7b3705ab9394e097c241356096848bf8 |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 80047cf912aa748ae51ce6180b581cf9 |
| Supplier Device Package: | 9be79cc75480f14b1c50110791202233 |
