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See Product Specifications
| номер части: | RN1112CT(TPL3) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | 2118df2aa458b1e26181f0df8cbeda82 |
| Current - Collector (Ic) (Max): | 4f2c7696497d474eaee0a6de96e028ad |
| Voltage - Collector Emitter Breakdown (Max): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Resistor - Base (R1): | dddab9c6f150f7ebed027692047db6db |
| Resistor - Emitter Base (R2): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 74d887a7b86a1ce0e4f0a47b4c38652c |
| Vce Saturation (Max) @ Ib, Ic: | e61ff4fa353c3aa540d0601a110c83ce |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | be7d1382a5bf108cc7038d74fe69a738 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 712561badb0e7c3e9ec18eb67d158a45 |
| Supplier Device Package: | 917d74eac8837850506d788d0fc4ad55 |
