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See Product Specifications
| номер части: | RN1112MFV,L3F |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 2118df2aa458b1e26181f0df8cbeda82 |
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | dddab9c6f150f7ebed027692047db6db |
| Resistor - Emitter Base (R2): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | a389bd1a8981022da1a4da644def3bcd |
| Vce Saturation (Max) @ Ib, Ic: | 8d0f1b35dc4e8e771de3cd00b1752c85 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 0e9fa846564772a23d270a6aaa046f54 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 304e247e63e29f16be170ede2fd6775d |
| Supplier Device Package: | f0dc9e2bb67aea25f3429950e6478e66 |
