RN1117MFV,L3F

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Mfr. #:

RN1117MFV,L3F

Mfr.:

Toshiba Semiconductor and Storage

Описание:

TRANS PREBIAS NPN 50V 0.1A VESM

Упаковка:

Tape & Reel (TR)

Datasheet:

RN1117MFV,L3F Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RN1117MFV,L3F
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	2118df2aa458b1e26181f0df8cbeda82
Current - Collector (Ic) (Max):	63f9c0b014d9e8860c3239712547a74a
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	62be411690721884738e929c9aa26f03
Resistor - Emitter Base (R2):	dc3f5fcfc7cb3c6d8293145b4a3f57f5
DC Current Gain (hFE) (Min) @ Ic, Vce:	b5649911283d0f52bb0bbde9996ebd7e
Vce Saturation (Max) @ Ib, Ic:	8d0f1b35dc4e8e771de3cd00b1752c85
Current - Collector Cutoff (Max):	53e8de3c9eceac47a1afcf3e46115044
Frequency - Transition:	8c36030ce9b51b65b427297115d6bff5
Power - Max:	0e9fa846564772a23d270a6aaa046f54
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	304e247e63e29f16be170ede2fd6775d
Supplier Device Package:	f0dc9e2bb67aea25f3429950e6478e66

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