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RN1130MFV,L3F

RN1130MFV,L3F

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RN1130MFV,L3F
Mfr.:
Описание:
TRANS PREBIAS NPN 50V 0.1A VESM
Упаковка:
Tape & Reel (TR)
Datasheet:
RN1130MFV,L3F Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RN1130MFV,L3F
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:Toshiba Semiconductor and Storage
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:2118df2aa458b1e26181f0df8cbeda82
Current - Collector (Ic) (Max):63f9c0b014d9e8860c3239712547a74a
Voltage - Collector Emitter Breakdown (Max):1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):f38162f05d4d792ac692f82a59bb3e2c
Resistor - Emitter Base (R2):f38162f05d4d792ac692f82a59bb3e2c
DC Current Gain (hFE) (Min) @ Ic, Vce:60c2e828c07a3c61b47e1d8a84723411
Vce Saturation (Max) @ Ib, Ic:8d0f1b35dc4e8e771de3cd00b1752c85
Current - Collector Cutoff (Max):53e8de3c9eceac47a1afcf3e46115044
Frequency - Transition:8c36030ce9b51b65b427297115d6bff5
Power - Max:0e9fa846564772a23d270a6aaa046f54
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:304e247e63e29f16be170ede2fd6775d
Supplier Device Package:f0dc9e2bb67aea25f3429950e6478e66
In Stock: 0
Stock:
0 Can Ship Immediately
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