RN1310(TE85L,F)

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See Product Specifications

Mfr. #:

RN1310(TE85L,F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

TRANS PREBIAS NPN 50V 0.1A USM

Упаковка:

Tape & Reel (TR)

Datasheet:

RN1310(TE85L,F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RN1310(TE85L,F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	2118df2aa458b1e26181f0df8cbeda82
Current - Collector (Ic) (Max):	63f9c0b014d9e8860c3239712547a74a
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	dc3f5fcfc7cb3c6d8293145b4a3f57f5
Resistor - Emitter Base (R2):	336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:	a389bd1a8981022da1a4da644def3bcd
Vce Saturation (Max) @ Ib, Ic:	7524c639e20d87fca4539a9c3d87feb3
Current - Collector Cutoff (Max):	deeb8c7cafdc46f12ef41020ec559854
Frequency - Transition:	8c36030ce9b51b65b427297115d6bff5
Power - Max:	0ac361d2907a7f247850300cb12747c5
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	2cffa920bac58c995bd937e7a19a7bc4
Supplier Device Package:	69a9a9b0f228667138dc5c251badad27