RN1427TE85LF

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Mfr. #:

RN1427TE85LF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

TRANS PREBIAS NPN 50V 0.8A SMINI

Упаковка:

Tape & Reel (TR)

Datasheet:

RN1427TE85LF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RN1427TE85LF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	2118df2aa458b1e26181f0df8cbeda82
Current - Collector (Ic) (Max):	6a9cc9d6e46dd6f45f7e1232f9252d5c
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	e85102c5e32a145a3450a496c2a5e52d
Resistor - Emitter Base (R2):	62be411690721884738e929c9aa26f03
DC Current Gain (hFE) (Min) @ Ic, Vce:	3442a55eb8a23d1b7bc28ddb1004722f
Vce Saturation (Max) @ Ib, Ic:	fd2d5d9a4ff26c8e323faa9704e00810
Current - Collector Cutoff (Max):	53e8de3c9eceac47a1afcf3e46115044
Frequency - Transition:	3cdec8d84d9da74be278ea20e77e6cb3
Power - Max:	ffd0459b4ef502205ee3430ebd978649
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	51bf93173785f0f3fc2d8b70cf119689
Supplier Device Package:	6fed134d4370a69345842176a59f3920

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Stock:

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