RN1705,LF

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See Product Specifications

Mfr. #:

RN1705,LF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

NPNX2 BRT Q1BSR2.2KOHM Q1BER47KO

Упаковка:

Tape & Reel (TR)

Datasheet:

RN1705,LF Datasheet (PDF)

ECAD-модель:

-

Атрибуты продукта

номер части:	RN1705,LF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	7d0134c7e1396ad690f8d37b56336df5
Current - Collector (Ic) (Max):	8fa6a3a617ed852de22fab67a97483fa
Voltage - Collector Emitter Breakdown (Max):	ef3fbc276cb9f08e57f243ec2875d986
Resistor - Base (R1):	6315dec285d0cfe77da662bd6cf1c65b
Resistor - Emitter Base (R2):	d80113e8d6286cadac92afe87493ba31
DC Current Gain (hFE) (Min) @ Ic, Vce:	a23a0d1fb6398094cbadf4b8b7721c5f
Vce Saturation (Max) @ Ib, Ic:	7524c639e20d87fca4539a9c3d87feb3
Current - Collector Cutoff (Max):	53e8de3c9eceac47a1afcf3e46115044
Frequency - Transition:	ed54b48b4b98a53ca5d3d8bed2512fbd
Power - Max:	5b3273ce5fe742a768cbb4b75c900b70
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	59d9e172e2034f3972a2368ddf395d2b
Supplier Device Package:	1d91dc5f86eac8eca3ce3a29a542ef19

In Stock: 8888

Stock:

8888 Can Ship Immediately

Для использования с

NSVMUN5211DW1T2G

RN2905FE,LXHF(CT

RN1911FE,LXHF(CT

NSVB1706DMW5T1G

PUMD24/ZLX

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