RN1710JE(TE85L,F)

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See Product Specifications

Mfr. #:

RN1710JE(TE85L,F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=

Упаковка:

Tape & Reel (TR)

Datasheet:

RN1710JE(TE85L,F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RN1710JE(TE85L,F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	46601694e1bdadc604bcd789d72c6868
Current - Collector (Ic) (Max):	8fa6a3a617ed852de22fab67a97483fa
Voltage - Collector Emitter Breakdown (Max):	ef3fbc276cb9f08e57f243ec2875d986
Resistor - Base (R1):	0e73efaf406ca87292d539a538458d94
Resistor - Emitter Base (R2):	336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:	a389bd1a8981022da1a4da644def3bcd
Vce Saturation (Max) @ Ib, Ic:	7524c639e20d87fca4539a9c3d87feb3
Current - Collector Cutoff (Max):	deeb8c7cafdc46f12ef41020ec559854
Frequency - Transition:	ed54b48b4b98a53ca5d3d8bed2512fbd
Power - Max:	c4a759f95e24e7e8bc893d7baf9d09b4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	64508b0d72ae5a3dfa37c38d39b7fe4e
Supplier Device Package:	bc78a8d162c6d5dcab05494d5e34a71e