RN1902FE,LF(CT

Images are for reference only
See Product Specifications

Mfr. #:

RN1902FE,LF(CT

Mfr.:

Toshiba Semiconductor and Storage

Описание:

TRANS 2NPN PREBIAS 0.1W ES6

Упаковка:

Tape & Reel (TR)

Datasheet:

RN1902FE,LF(CT Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RN1902FE,LF(CT
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	7d0134c7e1396ad690f8d37b56336df5
Current - Collector (Ic) (Max):	8fa6a3a617ed852de22fab67a97483fa
Voltage - Collector Emitter Breakdown (Max):	ef3fbc276cb9f08e57f243ec2875d986
Resistor - Base (R1):	df689bcc7f60ca8585c12872d7bd237a
Resistor - Emitter Base (R2):	c8f7c3b45142c283f496fb856f984d6f
DC Current Gain (hFE) (Min) @ Ic, Vce:	b5649911283d0f52bb0bbde9996ebd7e
Vce Saturation (Max) @ Ib, Ic:	7524c639e20d87fca4539a9c3d87feb3
Current - Collector Cutoff (Max):	deeb8c7cafdc46f12ef41020ec559854
Frequency - Transition:	ed54b48b4b98a53ca5d3d8bed2512fbd
Power - Max:	c4a759f95e24e7e8bc893d7baf9d09b4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	86215ac6c939e87a911385cbe7e7abfb
Supplier Device Package:	a341a0ec0c824fdb4da2f951178d486b

In Stock: 57

Stock:

57 Can Ship Immediately