-
Мой счет
Привет, добро пожаловать в Интернет
- Список заказа
- Связаться с нами
Images are for reference only
See Product Specifications
| номер части: | RN1910,LF(CT |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 7d0134c7e1396ad690f8d37b56336df5 |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Resistor - Base (R1): | 0e73efaf406ca87292d539a538458d94 |
| Resistor - Emitter Base (R2): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | a389bd1a8981022da1a4da644def3bcd |
| Vce Saturation (Max) @ Ib, Ic: | 7524c639e20d87fca4539a9c3d87feb3 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| Frequency - Transition: | ed54b48b4b98a53ca5d3d8bed2512fbd |
| Power - Max: | c4a759f95e24e7e8bc893d7baf9d09b4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 4292fad3e2346c8afd373cfd6137b6e7 |
| Supplier Device Package: | 2a0a91bb70a3fc2ceb02f30fb3d7c2d6 |
