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RN1911FETE85LF

RN1911FETE85LF

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RN1911FETE85LF
Mfr.:
Описание:
TRANS 2NPN PREBIAS 0.1W ES6
Упаковка:
Tape & Reel (TR)
Datasheet:
RN1911FETE85LF Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RN1911FETE85LF
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Производитель:Toshiba Semiconductor and Storage
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:7d0134c7e1396ad690f8d37b56336df5
Current - Collector (Ic) (Max):8fa6a3a617ed852de22fab67a97483fa
Voltage - Collector Emitter Breakdown (Max):ef3fbc276cb9f08e57f243ec2875d986
Resistor - Base (R1):df689bcc7f60ca8585c12872d7bd237a
Resistor - Emitter Base (R2):336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:a389bd1a8981022da1a4da644def3bcd
Vce Saturation (Max) @ Ib, Ic:7524c639e20d87fca4539a9c3d87feb3
Current - Collector Cutoff (Max):deeb8c7cafdc46f12ef41020ec559854
Frequency - Transition:ed54b48b4b98a53ca5d3d8bed2512fbd
Power - Max:c4a759f95e24e7e8bc893d7baf9d09b4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:86215ac6c939e87a911385cbe7e7abfb
Supplier Device Package:a341a0ec0c824fdb4da2f951178d486b
In Stock: 0
Stock:
0 Can Ship Immediately
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