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RN1961(TE85L,F)

RN1961(TE85L,F)

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RN1961(TE85L,F)
Mfr.:
Описание:
TRANS 2NPN PREBIAS 0.2W US6
Упаковка:
Tape & Reel (TR)
Datasheet:
RN1961(TE85L,F) Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RN1961(TE85L,F)
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Производитель:Toshiba Semiconductor and Storage
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Transistor Type:7d0134c7e1396ad690f8d37b56336df5
Current - Collector (Ic) (Max):8fa6a3a617ed852de22fab67a97483fa
Voltage - Collector Emitter Breakdown (Max):ef3fbc276cb9f08e57f243ec2875d986
Resistor - Base (R1):0e73efaf406ca87292d539a538458d94
Resistor - Emitter Base (R2):0e73efaf406ca87292d539a538458d94
DC Current Gain (hFE) (Min) @ Ic, Vce:b5649911283d0f52bb0bbde9996ebd7e
Vce Saturation (Max) @ Ib, Ic:7524c639e20d87fca4539a9c3d87feb3
Current - Collector Cutoff (Max):deeb8c7cafdc46f12ef41020ec559854
Frequency - Transition:ed54b48b4b98a53ca5d3d8bed2512fbd
Power - Max:5b3273ce5fe742a768cbb4b75c900b70
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:4292fad3e2346c8afd373cfd6137b6e7
Supplier Device Package:2a0a91bb70a3fc2ceb02f30fb3d7c2d6
In Stock: 35
Stock:
35 Can Ship Immediately
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