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See Product Specifications
| номер части: | RN1965(TE85L,F) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 7d0134c7e1396ad690f8d37b56336df5 |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Resistor - Base (R1): | 6315dec285d0cfe77da662bd6cf1c65b |
| Resistor - Emitter Base (R2): | d80113e8d6286cadac92afe87493ba31 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | a23a0d1fb6398094cbadf4b8b7721c5f |
| Vce Saturation (Max) @ Ib, Ic: | 7524c639e20d87fca4539a9c3d87feb3 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| Frequency - Transition: | ed54b48b4b98a53ca5d3d8bed2512fbd |
| Power - Max: | 5b3273ce5fe742a768cbb4b75c900b70 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 4292fad3e2346c8afd373cfd6137b6e7 |
| Supplier Device Package: | 2a0a91bb70a3fc2ceb02f30fb3d7c2d6 |
