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номер части: | RN2106(T5L,F,T) |
Категория: | Discrete Semiconductor Products |
Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Производитель: | Toshiba Semiconductor and Storage |
Упаковка: | Tape & Reel (TR) |
Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
Transistor Type: | 61de53416e92e38b3c8ecc0dac09cf4e |
Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
Resistor - Base (R1): | dc3f5fcfc7cb3c6d8293145b4a3f57f5 |
Resistor - Emitter Base (R2): | 942094f166c564b47b30fc312241d4ad |
DC Current Gain (hFE) (Min) @ Ic, Vce: | a23a0d1fb6398094cbadf4b8b7721c5f |
Vce Saturation (Max) @ Ib, Ic: | 7524c639e20d87fca4539a9c3d87feb3 |
Current - Collector Cutoff (Max): | 53e8de3c9eceac47a1afcf3e46115044 |
Frequency - Transition: | df549433840039035da9cefbb3700be4 |
Power - Max: | 0ac361d2907a7f247850300cb12747c5 |
Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
Package / Case: | b0007eeb26c56df960a54f9851bcc1aa |
Supplier Device Package: | a7885c51c567427cd74513f0c6e0d563 |