RN2106MFV,L3XHF(CT

Images are for reference only
See Product Specifications

Mfr. #:

RN2106MFV,L3XHF(CT

Mfr.:

Toshiba Semiconductor and Storage

Описание:

AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER

Упаковка:

Tape & Reel (TR)

Datasheet:

RN2106MFV,L3XHF(CT Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RN2106MFV,L3XHF(CT
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	61de53416e92e38b3c8ecc0dac09cf4e
Current - Collector (Ic) (Max):	63f9c0b014d9e8860c3239712547a74a
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	dc3f5fcfc7cb3c6d8293145b4a3f57f5
Resistor - Emitter Base (R2):	942094f166c564b47b30fc312241d4ad
DC Current Gain (hFE) (Min) @ Ic, Vce:	a23a0d1fb6398094cbadf4b8b7721c5f
Vce Saturation (Max) @ Ib, Ic:	8d0f1b35dc4e8e771de3cd00b1752c85
Current - Collector Cutoff (Max):	53e8de3c9eceac47a1afcf3e46115044
Frequency - Transition:	8c36030ce9b51b65b427297115d6bff5
Power - Max:	0e9fa846564772a23d270a6aaa046f54
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	304e247e63e29f16be170ede2fd6775d
Supplier Device Package:	f0dc9e2bb67aea25f3429950e6478e66