RN2316,LXHF

Images are for reference only
See Product Specifications

Mfr. #:

RN2316,LXHF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

AUTO AEC-Q TR PNP BRT, Q1BSR=4.7

Упаковка:

Tape & Reel (TR)

Datasheet:

RN2316,LXHF Datasheet (PDF)

ECAD-модель:

-

Атрибуты продукта

номер части:	RN2316,LXHF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	61de53416e92e38b3c8ecc0dac09cf4e
Current - Collector (Ic) (Max):	63f9c0b014d9e8860c3239712547a74a
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	dc3f5fcfc7cb3c6d8293145b4a3f57f5
Resistor - Emitter Base (R2):	62be411690721884738e929c9aa26f03
DC Current Gain (hFE) (Min) @ Ic, Vce:	a2f67c2b6733a8cee250a8b8a48984f4
Vce Saturation (Max) @ Ib, Ic:	7524c639e20d87fca4539a9c3d87feb3
Current - Collector Cutoff (Max):	53e8de3c9eceac47a1afcf3e46115044
Frequency - Transition:	df549433840039035da9cefbb3700be4
Power - Max:	0ac361d2907a7f247850300cb12747c5
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	2cffa920bac58c995bd937e7a19a7bc4
Supplier Device Package:	69a9a9b0f228667138dc5c251badad27

In Stock: 5300

Stock:

5300 Can Ship Immediately

Для использования с

NSVMUN2132T1G

BCR141E6433HTMA1

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