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See Product Specifications
| номер части: | RN2506(TE85L,F) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | b4b1a6ca89dd818eb845ff0414bb1038 |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Resistor - Base (R1): | 0e73efaf406ca87292d539a538458d94 |
| Resistor - Emitter Base (R2): | d80113e8d6286cadac92afe87493ba31 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | a23a0d1fb6398094cbadf4b8b7721c5f |
| Vce Saturation (Max) @ Ib, Ic: | 7524c639e20d87fca4539a9c3d87feb3 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| Frequency - Transition: | 1110489901da9a699e8cd4e34d4b2c5e |
| Power - Max: | 2940c137f79e4ef421e163569997f029 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 25ae2b3764e46657eb65e9234be54ea6 |
| Supplier Device Package: | d6e2a1ed38669c6c0cdbe557b557cab7 |
