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See Product Specifications
| номер части: | RN2710,LF |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 3c4f188edba860ebd19850af474c12fd |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Resistor - Base (R1): | 0e73efaf406ca87292d539a538458d94 |
| Resistor - Emitter Base (R2): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | a389bd1a8981022da1a4da644def3bcd |
| Vce Saturation (Max) @ Ib, Ic: | 7524c639e20d87fca4539a9c3d87feb3 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| Frequency - Transition: | 1110489901da9a699e8cd4e34d4b2c5e |
| Power - Max: | 5b3273ce5fe742a768cbb4b75c900b70 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 59d9e172e2034f3972a2368ddf395d2b |
| Supplier Device Package: | 1d91dc5f86eac8eca3ce3a29a542ef19 |
