RN46A1(TE85L,F)

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See Product Specifications

Mfr. #:

RN46A1(TE85L,F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

PNP + NPN BRT Q1BSR=22KOHM Q1BER

Упаковка:

Tape & Reel (TR)

Datasheet:

RN46A1(TE85L,F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RN46A1(TE85L,F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Transistor Type:	7ba1f6ec7f544456008433cc373dff5d
Current - Collector (Ic) (Max):	8fa6a3a617ed852de22fab67a97483fa
Voltage - Collector Emitter Breakdown (Max):	ef3fbc276cb9f08e57f243ec2875d986
Resistor - Base (R1):	44b05c9688f8b14e78fc0d7a4cbc6ac1
Resistor - Emitter Base (R2):	44b05c9688f8b14e78fc0d7a4cbc6ac1
DC Current Gain (hFE) (Min) @ Ic, Vce:	b4b322199439365025681dfaf53c400a
Vce Saturation (Max) @ Ib, Ic:	7524c639e20d87fca4539a9c3d87feb3
Current - Collector Cutoff (Max):	53e8de3c9eceac47a1afcf3e46115044
Frequency - Transition:	7bcf75b4d686c624725e7f4cbd97f332
Power - Max:	2940c137f79e4ef421e163569997f029
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	ba9086440b12ae203cf29e9ec113b2c0
Supplier Device Package:	0bca2f9caa85f1c1ba0f2348dca666b0