S1PA7[UD]

Images are for reference only
See Product Specifications

Mfr. #:

S1PA7[UD]

Mfr.:

Toshiba Semiconductor and Storage

Описание:

IGBT TRANS MODULE TO3PN

Упаковка:

Tray

Datasheet:

S1PA7[UD] Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	S1PA7[UD]
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Modules
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tray
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Configuration:	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	336d5ebc5436534e61d16e63ddfca327
Current - Collector (Ic) (Max):	336d5ebc5436534e61d16e63ddfca327
Power - Max:	336d5ebc5436534e61d16e63ddfca327
Vce(on) (Max) @ Vge, Ic:	336d5ebc5436534e61d16e63ddfca327
Current - Collector Cutoff (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Cies) @ Vce:	336d5ebc5436534e61d16e63ddfca327
Input:	336d5ebc5436534e61d16e63ddfca327
NTC Thermistor:	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	336d5ebc5436534e61d16e63ddfca327
Package / Case:	336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:	336d5ebc5436534e61d16e63ddfca327