SSM3J356R,LF

Images are for reference only
See Product Specifications

Mfr. #:

SSM3J356R,LF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 60V 2A SOT-23F

Упаковка:

Tape & Reel (TR)

Datasheet:

SSM3J356R,LF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SSM3J356R,LF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	49be2d3befbb5f287b3239b421243897
Drive Voltage (Max Rds On, Min Rds On):	f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:	04b033cf6ffa98a852fa600a251296b4
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	3ad909970b0901c48af984d857782ac6
Vgs (Max):	02cc895643c87c92ed1c8005e0d8d38d
Input Capacitance (Ciss) (Max) @ Vds:	a46f4fdaf3c8b08a6c5b4f565d292b02
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4c6a955db65e87d580766aee735f1644
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	6f7ddd1a3871496db093aff0b170878f
Package / Case:	288ec396e7075d0ccc606941dafc2b09