SSM3J35CT,L3F

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See Product Specifications

Mfr. #:

SSM3J35CT,L3F

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CHANNEL 20V 100MA CST3

Упаковка:

Tape & Reel (TR)

Datasheet:

SSM3J35CT,L3F Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SSM3J35CT,L3F
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	c91e2473ed488e1fda5aeedc6ccd2223
Drive Voltage (Max Rds On, Min Rds On):	4ac6e717d1a6b17ced3bd74659167035
Rds On (Max) @ Id, Vgs:	856273051fd03f8d34168c8098fe547e
Vgs(th) (Max) @ Id:	255bbeac52b52c6c3dc550097e1d43fd
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:	ad72273dda132c3ca47958b76697d1d4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	95da52409c3e57226739670ea67c825b
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	917d74eac8837850506d788d0fc4ad55
Package / Case:	712561badb0e7c3e9ec18eb67d158a45