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See Product Specifications
| номер части: | SSM6J213FE(TE85L,F |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 9945a529f9f3f7e23d6cd49cab56133a |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Current - Continuous Drain (Id) @ 25°C: | d78e99a3956137307cd501d0ce36fdb8 |
| Drive Voltage (Max Rds On, Min Rds On): | c20b0e732e8e50ac667a2996b676523a |
| Rds On (Max) @ Id, Vgs: | 44519678ef0807ab1b9b1bf0b45a720e |
| Vgs(th) (Max) @ Id: | 255bbeac52b52c6c3dc550097e1d43fd |
| Gate Charge (Qg) (Max) @ Vgs: | 9eb6ee41ed01fc741307e80e91692b43 |
| Vgs (Max): | 141ce97fa4644284a9f0bfb5e7811ba1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 2029ed1992fba79a1e150da827dbed96 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | ae2350350ba6e5a69d2dc91b08eae7b5 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | a341a0ec0c824fdb4da2f951178d486b |
| Package / Case: | 86215ac6c939e87a911385cbe7e7abfb |
