SSM6J214FE(TE85L,F

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See Product Specifications

Mfr. #:

SSM6J214FE(TE85L,F

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 30V 3.6A ES6

Упаковка:

Tape & Reel (TR)

Datasheet:

SSM6J214FE(TE85L,F Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SSM6J214FE(TE85L,F
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	c985a4ecf583f7bf51241a68fb32b769
Drive Voltage (Max Rds On, Min Rds On):	d2e44972f573dbb9bc783edf82f45e5b
Rds On (Max) @ Id, Vgs:	e0c95617ceda0e3e6ddcb65ce5d5ef6f
Vgs(th) (Max) @ Id:	18bd5d5f85133d059fa755311ccfa70f
Gate Charge (Qg) (Max) @ Vgs:	561f3137e15d7b4ce2b77f92954f3e9c
Vgs (Max):	ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:	1b95d9aa9478669ea7818536bbd02f78
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ae2350350ba6e5a69d2dc91b08eae7b5
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	a341a0ec0c824fdb4da2f951178d486b
Package / Case:	86215ac6c939e87a911385cbe7e7abfb