SSM6J422TU,LXHF

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Mfr. #:

SSM6J422TU,LXHF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

SMOS P-CH VDSS=-20V, VGSS=+6/-8V

Упаковка:

Tape & Reel (TR)

Datasheet:

SSM6J422TU,LXHF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SSM6J422TU,LXHF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	0fef84355726c5ae6e53a5fd06d60e2d
Drive Voltage (Max Rds On, Min Rds On):	c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:	e674baf89f94d5689ef22c5596c05f68
Vgs(th) (Max) @ Id:	255bbeac52b52c6c3dc550097e1d43fd
Gate Charge (Qg) (Max) @ Vgs:	a229e58610b5da1f79196a73410b943f
Vgs (Max):	9bc4873966adc716bcb9307451c94121
Input Capacitance (Ciss) (Max) @ Vds:	8bfad4274df2a64e6e703831e62e32b1
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4c6a955db65e87d580766aee735f1644
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	be44833cf42f32bb7ea6a2a8ac8009a5
Package / Case:	7c90fc2d381f537f5d12d3540113c957