SSM6J808R,LXHF

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See Product Specifications

Mfr. #:

SSM6J808R,LXHF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

AUTO AEC-Q SS MOS P-CH LOGIC-LEV

Упаковка:

Tape & Reel (TR)

Datasheet:

SSM6J808R,LXHF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SSM6J808R,LXHF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	9dc91beecc2f6baf922e9c59625131e5
Drive Voltage (Max Rds On, Min Rds On):	f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:	238aa40420b8eb0bbff633957d362be1
Vgs(th) (Max) @ Id:	c156ebf3b2e9562a1504e823a9fa3cb7
Gate Charge (Qg) (Max) @ Vgs:	36311d63c4fe44298ec27ed26aa5e1e1
Vgs (Max):	02cc895643c87c92ed1c8005e0d8d38d
Input Capacitance (Ciss) (Max) @ Vds:	dd97196793157caae4eab1da5b367cf1
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	a8c66c4442cd4a3041823bb4b268783b
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0a994a96fdd56ebc7e7b6a37ba29e3a1
Package / Case:	7c90fc2d381f537f5d12d3540113c957