SSM6K810R,LXHF

Images are for reference only
See Product Specifications

Mfr. #:

SSM6K810R,LXHF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

AUTO AEC-Q SS MOS N-CH LOGIC-LEV

Упаковка:

Tape & Reel (TR)

Datasheet:

SSM6K810R,LXHF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SSM6K810R,LXHF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	dfffc8d8bbbbbc6d50d049496725fad9
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	ef7b24ce80ee76b07ceb90293e8959e6
Vgs(th) (Max) @ Id:	0bf78f4d9d4f9a18fa37438e3a51e770
Gate Charge (Qg) (Max) @ Vgs:	6ac8860cadd531d54768978b3f340f90
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	821a3ab3cde1e94d71a4aa72c0f7b458
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	a8c66c4442cd4a3041823bb4b268783b
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0a994a96fdd56ebc7e7b6a37ba29e3a1
Package / Case:	7c90fc2d381f537f5d12d3540113c957