TJ200F04M3L,LXHQ

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See Product Specifications

Mfr. #:

TJ200F04M3L,LXHQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 40V 200A TO220SM

Упаковка:

Tape & Reel (TR)

Datasheet:

TJ200F04M3L,LXHQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TJ200F04M3L,LXHQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	935fd920957a66dcbc9d75f86ae6e22c
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	c66c90962e3953ff70cbcfd4fef80670
Vgs(th) (Max) @ Id:	2da3540dbfa7d901b7d797a5001bb2e7
Gate Charge (Qg) (Max) @ Vgs:	75c982b6cad431e26f8bdfc82ec7b4ed
Vgs (Max):	02cc895643c87c92ed1c8005e0d8d38d
Input Capacitance (Ciss) (Max) @ Vds:	1b15d9947f0897e6a7c10a154342d6f4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	925b824d4ea9a147ba322c6feb66115c
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	f7944d055bb3cc70853f272a8d27664f
Package / Case:	99446f4470b43888d0c78d7d2cdfc956