TJ8S06M3L(T6L1,NQ)

TJ8S06M3L(T6L1,NQ)

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TJ8S06M3L(T6L1,NQ)
Описание:
MOSFET P-CH 60V 8A DPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
TJ8S06M3L(T6L1,NQ) Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:TJ8S06M3L(T6L1,NQ)
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Toshiba Semiconductor and Storage
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:3f9b80b2313763e17eb9d4414601dfee
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:0c45f81cad40e5d9ff8064e9b9fee37a
Vgs(th) (Max) @ Id:2da3540dbfa7d901b7d797a5001bb2e7
Gate Charge (Qg) (Max) @ Vgs:b662323f4246acd1b360f3b4faeeff60
Vgs (Max):02cc895643c87c92ed1c8005e0d8d38d
Input Capacitance (Ciss) (Max) @ Vds:1316941c0408fb69003476a44a337f97
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):bebc005e0f3f0e9ae4e4aa7f4c19c644
Operating Temperature:dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:0a914331c901d37ac7c2db598fa12b21
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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