TK100L60W,VQ

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See Product Specifications

Mfr. #:

TK100L60W,VQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 100A TO3P

Упаковка:

Tube

Datasheet:

TK100L60W,VQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK100L60W,VQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	626760822211ebd4c2dcfd72769f5d49
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	f32382d8b58cb54e83f8b0cb420a55cd
Vgs(th) (Max) @ Id:	13e1e2dd943cd60f56aee987a2f61b8c
Gate Charge (Qg) (Max) @ Vgs:	497735306e0ffe6c3466228a9346b613
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	b42aa21c2e86d1beadb17074f34a9b35
FET Feature:	c6cc4e60238e9caf929d78b14b254a68
Power Dissipation (Max):	bb87be588843e8a911462c7bd6c8b3be
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	95833e6d88018f2afa098533140499bb
Package / Case:	3d6f2d462c99f772438dca830bcf3379