TK100S04N1L,LQ

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See Product Specifications

Mfr. #:

TK100S04N1L,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 40V 100A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK100S04N1L,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK100S04N1L,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	626760822211ebd4c2dcfd72769f5d49
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	dfe79b0df0a04c424f076385311df214
Vgs(th) (Max) @ Id:	fddd40c656bc171019d807053034d462
Gate Charge (Qg) (Max) @ Vgs:	68ed74d0d26e66221879eeb185cf35f3
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	08efbca6b921c85e65930f8ef86f76cb
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0a914331c901d37ac7c2db598fa12b21
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95