TK10A80W,S4X

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Mfr. #:

TK10A80W,S4X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 800V 9.5A TO220SIS

Упаковка:

Tube

Datasheet:

TK10A80W,S4X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK10A80W,S4X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:	5206608846846c7928952a60216cc01c
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	ca346b78f108ec1e40deca601ad58673
Vgs(th) (Max) @ Id:	fb5be60ab382ba12d3d61620aac69d16
Gate Charge (Qg) (Max) @ Vgs:	b662323f4246acd1b360f3b4faeeff60
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	80e8f8646fde6e6127a3651fde69a402
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	2aa0e4b96ebad01dba346ba12d8321e6
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e75deed210709724cc39b7c90f58dad6
Package / Case:	a02e0d1a928de3366340ceae094aecd8