TK11P65W,RQ

Images are for reference only
See Product Specifications

Mfr. #:

TK11P65W,RQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 650V 11.1A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK11P65W,RQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK11P65W,RQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	72ceebcfaa7fdbbffca5939bb4d5fa58
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	6303b66d7115e9e68afa0244d76b439a
Vgs(th) (Max) @ Id:	6be9e71f318d6c9dfcdf66437faa3952
Gate Charge (Qg) (Max) @ Vgs:	de0812168e822f1110815fd33f6452ea
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	899c4e9c250679f79ab3e91422dbfe8d
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95