TK11S10N1L,LQ

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See Product Specifications

Mfr. #:

TK11S10N1L,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 11A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK11S10N1L,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK11S10N1L,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	f4b97588009aece9a13c6f625eb7a016
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	bdd1cdcf5857c59eb07e3689bf2db581
Vgs(th) (Max) @ Id:	0bf78f4d9d4f9a18fa37438e3a51e770
Gate Charge (Qg) (Max) @ Vgs:	b8a0640fe9525616e9f66bccd7456bd2
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	9b4650ebee4deb4218f263d65d82a50b
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	9a89cc95043fae4e2135b24e293ac5c9
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0a914331c901d37ac7c2db598fa12b21
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95