TK12E80W,S1X

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See Product Specifications

Mfr. #:

TK12E80W,S1X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 800V 11.5A TO220

Упаковка:

Tube

Datasheet:

TK12E80W,S1X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK12E80W,S1X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:	9b85b9b093651739436791dc0d0a4ee2
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	d7ce51d55b3bf3729a77e61d41a47774
Vgs(th) (Max) @ Id:	59d48c6c1f5e21bf45e7ec2661bb3235
Gate Charge (Qg) (Max) @ Vgs:	972213b4ff98b73fb67879667322f035
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	fe61bf1f98e846b3f041ab5b11504407
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	d5a6ce91f0ad073cd80d5367e3fb14c4
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468