TK12J60W,S1VE(S

Images are for reference only
See Product Specifications

Mfr. #:

TK12J60W,S1VE(S

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 11.5A TO3P

Упаковка:

Tray

Datasheet:

TK12J60W,S1VE(S Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK12J60W,S1VE(S
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tray
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	9b85b9b093651739436791dc0d0a4ee2
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	3d14f4e7aa8ac976dbd947f50313cfdb
Vgs(th) (Max) @ Id:	97f96eb8bcbfa579e63c832922a37f4a
Gate Charge (Qg) (Max) @ Vgs:	de0812168e822f1110815fd33f6452ea
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	899c4e9c250679f79ab3e91422dbfe8d
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	8e657a4c990a3d844f6ec86ca07d1393
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	802becb26be6cafacf181bb527af5311
Package / Case:	a37ad9863329afbf5b7bab5645143153

In Stock: 0

Stock:

0 Can Ship Immediately