TK13E25D,S1X(S

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See Product Specifications

Mfr. #:

TK13E25D,S1X(S

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 250V 13A TO220-3

Упаковка:

Tube

Datasheet:

TK13E25D,S1X(S Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK13E25D,S1X(S
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	c5cbb7b66561ae3dbbdcebae7b0fa3f9
Current - Continuous Drain (Id) @ 25°C:	dfff9d157e910a79f49b3b130f9e83bb
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	8f120b9200b72f9ddc0dac40b27c8fe3
Vgs(th) (Max) @ Id:	92e41164c30579f3defe30c91bbd1c8d
Gate Charge (Qg) (Max) @ Vgs:	de0812168e822f1110815fd33f6452ea
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	f5b34362d82da1f9dff311c8dd7fc74d
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	325cd24e8c9c3e3ea086eccc01be3cc6
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	46bb638de2ea693de650d7f1c3115468
Package / Case:	46bb638de2ea693de650d7f1c3115468