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See Product Specifications
| номер части: | TK13E25D,S1X(S |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | c5cbb7b66561ae3dbbdcebae7b0fa3f9 |
| Current - Continuous Drain (Id) @ 25°C: | dfff9d157e910a79f49b3b130f9e83bb |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 8f120b9200b72f9ddc0dac40b27c8fe3 |
| Vgs(th) (Max) @ Id: | 92e41164c30579f3defe30c91bbd1c8d |
| Gate Charge (Qg) (Max) @ Vgs: | de0812168e822f1110815fd33f6452ea |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | f5b34362d82da1f9dff311c8dd7fc74d |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 325cd24e8c9c3e3ea086eccc01be3cc6 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 46bb638de2ea693de650d7f1c3115468 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
