TK17E80W,S1X

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See Product Specifications

Mfr. #:

TK17E80W,S1X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CHANNEL 800V 17A TO220

Упаковка:

Tube

Datasheet:

TK17E80W,S1X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK17E80W,S1X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:	3494847b9d639b159648bfd317043473
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	6b13ca8f41a1f8eeb1fbcdd9a6cd108e
Vgs(th) (Max) @ Id:	e894124970865d4a2cee1c2c0fb2c13b
Gate Charge (Qg) (Max) @ Vgs:	f1d4411c14a38876d735f24f8437b43a
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4b5f1b5b3f59fa780831e03e86ce5fc0
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	90f0bb11535d8d8a09a6832b4915536f
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468