TK18E10K3,S1X(S

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Mfr. #:

TK18E10K3,S1X(S

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 18A TO220-3

Упаковка:

Tube

Datasheet:

TK18E10K3,S1X(S Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK18E10K3,S1X(S
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	66ab69b459c614644a63dc0c3e22ff0d
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	6a056ca464c3b247c56d4f0c552ee50a
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	bc58166896f73e30fff327343c82357f
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	336d5ebc5436534e61d16e63ddfca327
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	46bb638de2ea693de650d7f1c3115468
Package / Case:	46bb638de2ea693de650d7f1c3115468