TK1K9A60F,S4X

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Mfr. #:

TK1K9A60F,S4X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 3.7A TO220SIS

Упаковка:

Tube

Datasheet:

TK1K9A60F,S4X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK1K9A60F,S4X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	80d64354a61b327dac5bb386b57d261e
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	749459a2c79248e501ec90a1d65ce77d
Vgs(th) (Max) @ Id:	60edf620940367e94cb5a2a20590990e
Gate Charge (Qg) (Max) @ Vgs:	f7fb58f6f88663872c1cfe2690a9fe45
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	38fbf6ff689a396476dc584ab75aa0e6
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	6395095cf5d045979816b63506fbde01
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e75deed210709724cc39b7c90f58dad6
Package / Case:	a02e0d1a928de3366340ceae094aecd8