TK1R4S04PB,LXHQ

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See Product Specifications

Mfr. #:

TK1R4S04PB,LXHQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 40V 120A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK1R4S04PB,LXHQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK1R4S04PB,LXHQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	8ea4ca5725d23479e993f518885a34f1
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	91f3c359289aa45f9dc7d9e10142a01d
Vgs(th) (Max) @ Id:	59779e26b372f7c39b04b4a96765c326
Gate Charge (Qg) (Max) @ Vgs:	64de9141c3cdbcdab6ad97b5fb791680
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	fb7b18d824332e1a6071cf2f7aa3bcc2
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	90f0bb11535d8d8a09a6832b4915536f
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0a914331c901d37ac7c2db598fa12b21
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95